Surface barrier detectors from P-type Si

  • 12 Pages
  • 2.70 MB
  • English
Bhabha Atomic Research Centre , Bombay
Semiconductor nuclear coun
Statementby Ramesh Chaudhry and R. V. Srikantiah.
ContributionsSrikantiah, R. V., joint author., India. Atomic Energy Commission.
LC ClassificationsQC787.C6 C48
The Physical Object
Pagination9 p., [12] l.
ID Numbers
Open LibraryOL5178572M
LC Control Number74923249

Simplified Diagram of Surface Barrier Si Detector Manufacturing. Table 1 Atomic density, atoms/cm 3 X is the voltage that must be applied to a 13, -cm p-type or -cm n-type silicon detector to stop a MeV alpha, a 6-MeV proton, or a keV electron within the resolution of surface barrier detectors can be.

ORTEC pioneered the first silicon surface barrier detectors for charged particle spectroscopy in the early ’s. Since then, ORTEC has expanded the product. The surface barrier detector is a p-n type silicon diode wafer characterized by a rather thin Surface barrier detectors from P-type Si book layer (Fig.

(a)). It is made of n-type silicon on which one surface has been etched prior to coating with a thin layer of gold (typically ~40 μg/cm 2) and the other surface coated with a thin layer of aluminum (typically ~40 μg/cm 2) to provide electrical contact.

A Surface Barrier Detector for environmental monitoring was fabricated with an ultrahigh purity p-type Si crystal. The crystal had a nominal resistivity of 50 kOmega cm, and Al was evaporated on. The surface barrier detector is a thin layer of p-type silicon on the n-type substrate resulting p-n junction.

Details Surface barrier detectors from P-type Si PDF

When the scattered ions exchange energy with the electrons on the surface of the detector upon reaching the detector, electrons get promoted from the valence band to the conduction band. Find out information about silicon surface barrier detector.

A type of junction detector made from a wafer of n -type silicon which is subjected to etching and surface treatments to create a thin layer of p -type Explanation of silicon surface barrier detector.

If the initial material was p-type, the majority of radiation interactions are in the p-type material, so this is called a p-type detector. Similarly, the majority of interactions are in the n-type material in the second case, hence called an n-type detector.

Fig. J Silicon Detectors TIPP Carl Haber LBNL 6 channels Late ’s surface barrier strip detector (Pisa) ~, discrete channels, ~14 mW/channel (CERN) ~, “Microplex”, 1st readout ASIC, 3 mW/chan (Parker,Hyams,Walker) Looking for charm in fixed target hadronic interactions.b’s at lepton colliders.

p-type) so that a depleted region exists. An applied reverse bias widens this depleted region which is the sensitive detector volume, and can be extended to the limit of breakdown voltage. PIPS detectors are generally available with depletion depths of to µm.

These detectors can be used with the Model BT preamplifier. of the metal-silicon surface. All practical n and p type ohmic contacts to Si are depletion type. The barrier heights that are used in modeling ohmic contact to Si are empirical values, usually measured by capacitance-voltage, current-voltage or photoemission techniques.

The risetimes of the signals collected from totally depleted silicon surface barrier detectors have been measured and show strong dependence on the Z of the incident charged particles. This dependence has been observed for incident ions ranging from tritons to fluorine. A method for plasma delay and pulse-height defect corrections for Si surface barrier detectors (SBD) is presented.

Based on known empirical formulae, simple approximations involving the measured time of flight (TOF) and energy of the ions were found and a mass reconstruction procedure was developed. The procedure was applied for obtaining the fission fragment mass and angular distributions. We used micro-channel plate (MCP) detectors as fast time pick-offs and surface-barrier (SB) n-type Si detectors made from homogeneously neutron-transmutation-doped (n-TD) silicon.

As the particles, products from the reactions of a MeV 20 Ne beam impinging on 12. Optical barrier heights of CoSi 2 and NiSi detectors on p-type Si were reported to be eV and eV, respectively. 45, 46 By IrSi had been found to be the silicide with the highest electrical barrier on n-type Si, 47 and it was expected to extend the cutoff wavelength for IrSi detectors on p-type Si.

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A surface barrier detector is a diode semiconductor with big area, composed of an n-type silicon crystal with one side p-type doped. The reverse, also presents characteristics of the detector.

[P-type silicon surface barrier detector used for X-ray dosimetry]. [Article in Japanese] Yamamoto H, Hatakeyama S, Norimura T, Tsuchiya T. Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to.

Such detectors did not come into wide use. In the ’s, semiconductor detectors based on a surface-barrier junction in Si (Figure 1, a) found practical application. For a surface-barrier detector the depth W of the sensitive volume is determined by the magnitude of the cutoff voltage V: where p is the resistivity of the semiconductor in ohm-cm.

Energy deposition spectra from reactions of protons with Si nuclei in and micron surface-barrier detectors are measured. Experimental data are compared with calculations based on an intranuclear cascade model with tracing the particle trajectory in the detector volume.

Description Surface barrier detectors from P-type Si PDF

It is shown that the algorithm developed predicts both the shape of the experimental spectrum and the total yield of. A p-type absorber with a Cd molar composition of was arsenic doped at the level of 1 × 10 16 cm –3. The cap-barrier structural unit was a combination of a highly As doped p-type cap contact layer with the same Cd molar composition as for the absorbing layer and a p-type wide bandgap.

Responsivity (R): A measure of a detector's effectiveness in producing an electrical signal. The product of the light input (in Watts) and the responsivity result in the predicted output of the detector (in amps). Varies with temperature.

Detectivity (D): D is a measure of the detecting ability of the photodiode. As ofHPGe detectors commonly use lithium diffusion to make an n + ohmic contact, and boron implantation to make a p + contact.

Coaxial detectors with a central n + contact are referred to as n-type detectors, while p-type detectors have a p + central contact.

The thickness of these contacts represents a dead layer around the surface of. Metal-silicide-silicon Schottky barrier diodes are made by a process which yields the characteristic of low barrier height, in the region of volt, suitable for use without dc bias as a detector at microwave frequencies.

Low barrier height metals, such as palladium, platinum and hafnium are processed through heat treatment steps which reduce the barrier height below that which is typical.

Mirion Passivated, Implanted, Planar Silicon (PIPS) detectors have proven themselves in thousands of applications worldwide. Innovations driven by the myriad of applications we serve have resulted in continuous improvements to the performance of the PIPS technology – a difference you will see with our alpha spectroscopy, beta detection and continuous air monitors as well as in wide-ranging.

ORTEC's Alpha Suite Alpha Spectrometer models feature a complete instrument requiring vacuum, power, and connection to a PC, a digital spectrum stabilizer, and MAESTRO MCA Emulation Software.

We describe the method by which surface barrier detectors (SBD) can be constructed from p- and n-type high-purity silicon (Si), with aluminum (Al) as a rectifying contact.

The dead layer on the surface of a detector serves to protect the Si surface. The detector dead layer is a consequence from the fabrication method, which starts with a homogeneous crystal of p-type materials and then converts a region of the crystal near the surface from a p-type to an n-type material.

This creates a junction at some distance. In contrary, as shown in figure 2(c), the surface barrier is manipulated to be much smaller at V. The following chart indicates the comparative data for Schottky barrier diodes made according to the invention of palladium on p-type silicon, platinum on p-type silicon, and hafnium on n-type silicon, the silicon in each case being an epitaxial layer 12 of resistivity ohm-cm on a substrate 11 lower-resistivity ( ohm-cm) DATA.

1 Surface Mount Zero Bias Schottky Detector Diodes 3 N Type Si Ceramic Surface Mount ODS 10 Yes Silicon Schottky P-Type Diodes: Low Barrier. Previously the design and fabrication of GaAs surface barrier detector for alpha radiation detection has been done by this research group [9].In this paper the direct type radiation detector is.Fig.

5. Specific contact resistivity of metal contacts to n-type and p-type Si. Solid lines are calculated from the model. (Ref: S. Swirhun, Electrochem. Soc., Oct. ) Observations 1. Specific contact resistivity, ρ c ↓ as barrier height ↓ 3. For a given doping density contact resistance is higher for n-type Si than p-type.Metal contacts on UHP p-Si were experimentally investigated.

Au was evaporated at the back face of a UHP p-Si wafer to form the ohmic contact. On its front face, electrodes of 11 different metals-Pd, Ag, Au, Ni, Bi, Pb, Sn, Al, Mn, Mg and Sm were evaporated with each electrode area of cm2, and the detector characteristics were measured.

Mg, Al, Sn and Mn showed satisfactory characteristics.